1) moving screw dislocation
运动螺型位错
1.
On the interaction between a moving screw dislocation and a cylindrical rigid inclusion in piezoelectromagnetic solid;
压电磁材料中运动螺型位错与圆柱形刚性夹杂的干涉作用
2.
The problem for the interaction between a uniformly moving screw dislocation and interface rigid lines in two dissimilar anisotropic materials are investigated.
研究了各向异性双材料中匀速运动螺型位错与界面刚性线的干涉问题。
2) screw dislocation
螺型位错
1.
The elasticity field for screw dislocation in cubic quasi-crystal;
立方准晶中螺型位错的弹性场
2.
This paper studied the interaction of a generalized screw dislocation with interfacial conducting rigid line inclusions by using analysis continuation principle of functions of complex variable,and the general solution of the problem was presented.
采用复变函数解析延拓原理,研究了电磁材料中压电磁螺型位错和共线界面刚性线的磁电弹耦合干涉效应并得到该问题的一般解答。
3.
The electroelastic interaction of a screw dislocation inside a circular inclusion with interfacial cracks in piezoelectric composite materials under anti_plane shear and in_plane electric loads at infinity is investigated.
研究了无穷远纵向剪切和面内电场共同作用下,压电复合材料圆形夹杂中螺型位错与界面裂纹的电弹耦合干涉作用。
3) dilocation movement model
位错运动模型
4) dislocation movement
位错运动
1.
Meanwhile,the addition of Ca/Y and further impediment of the dislocation movement due to more .
1%Y(质量分数,下同)变质处理后的细晶强化和固溶强化作用提高了合金的拉伸强度和延伸率,同时由于Ca/Y元素的加入及晶界数量增多对位错运动的进一步阻碍作用降低了合金的应变振幅效应,从而降低了其阻尼性能;研究还发现Mg-0。
5) dislocation motion
位错运动
1.
To investigate the dislocation motion characteristics in low-temperature(LT) buffer during the growing process of lattice mismatched heterostructure,a 60° dislocation dipole and 5 types of ring-shaped hexagonal vacancy defects with their different relative positions to the dislocation are modeled in a Si crystal via molecular dynamics simulation.
为了研究晶格常数不匹配的异质结结构(Si1-xGex/Si)在生长过程中低温缓冲层内的位错运动特性,在Si晶体中建立了60°位错偶极子,以及相对于位错不同空间位置的5种六边形环状空位缺陷模型。
2.
To get the screw dislocation motion characteristic in the growing process of lattice mismatched heterostructures,a pair of screw dislocations is introduced in a full periodic Si crystal via dislocation dipole modeling.
通过Parrinello-Rahman方法对模型施加剪应力,并应用分子动力学计算位错运动速度及交滑移的发生与外加剪应力间的关系。
3.
We investigate the characteristics of dislocation motion as influenced by defects in a low temperature buffer during the growth of lattice-mismatched heterostructures(SiGe/Si).
为了研究晶格常数不匹配的异质结SiGe/Si生长过程中低温缓冲层内缺陷对位错运动的影响,使用位错偶极子模型在Si晶体内建立了一对30°部分位错,和导致30°部分位错运动的弯结结构,以及位错芯重构缺陷(RD)与弯结组合而生成的弯结-RD结构。
6) piezoelectric screw dislocation
压电螺型位错
1.
The electroelastic interaction between a piezoelectric screw dislocation and collinear interfacial rigid lines is studied.
研究了压电材料中压电螺型位错和共线界面导电刚性线夹杂的电弹干涉效应。
2.
The electroelastic interaction between a piezoelectric screw dislocation and a circular coated inclusion with interfacial cracks is investigated.
研究位于基体或夹杂中任意点的压电螺型位错与含界面裂纹圆形涂层夹杂的电弹耦合干涉问题。
补充资料：螺型位错
分子式：
CAS号：
性质：又称螺旋位错。一个晶体的某一部分相对于其余部分发生滑移，原子平面沿着一根轴线盘旋上升，每绕轴线一周，原子面上升一个晶面间距。在中央轴线处即为一螺型位错。围绕位错线原子的位移矢量称为滑移矢量或伯格斯(Burgers)矢量，对于螺型位错，位错线平行于伯格斯矢量。
CAS号：
性质：又称螺旋位错。一个晶体的某一部分相对于其余部分发生滑移，原子平面沿着一根轴线盘旋上升，每绕轴线一周，原子面上升一个晶面间距。在中央轴线处即为一螺型位错。围绕位错线原子的位移矢量称为滑移矢量或伯格斯(Burgers)矢量，对于螺型位错，位错线平行于伯格斯矢量。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条